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Manufacturer Part #

STU4N52K3

N-Channel 525 V 2.6 Ohm Through Hole SuperMESH3 Power Mosfet - IPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STU4N52K3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 525V
Drain-Source On Resistance-Max: 2.6Ω
Rated Power Dissipation: 45W
Qg Gate Charge: 11nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 2.5A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 21ns
Rise Time: 7ns
Fall Time: 14ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Technology: MDmesh
Input Capacitance: 334pF
Package Style:  IPAK
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,710.00
USD
Quantity
Unit Price
3,000
$0.57
6,000
$0.565
9,000
$0.56
12,000
$0.555
15,000+
$0.55
Product Variant Information section