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STMicroelectronics | STU9N60M2

Manufacturer Part #

STU9N60M2

N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STU9N60M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.78Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 5.5A
Turn-on Delay Time: 8.8ns
Turn-off Delay Time: 22ns
Rise Time: 7.5ns
Fall Time: 13.5ns
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 320pF
Package Style:  IPAK
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,695.00
USD
Quantity
Unit Price
3,000
$0.565
6,000
$0.56
9,000
$0.555
15,000+
$0.545
Product Variant Information section