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Taiwan Semiconductor | TSM250N02DCQ RFG

Manufacturer Part #

TSM250N02DCQ RFG

MOSFET 2 N-CH 20V 5.8A 6TDFN

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Taiwan Semiconductor TSM250N02DCQ RFG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 25mΩ
Rated Power Dissipation: 0.62W
Qg Gate Charge: 7.7nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 5.8A
Turn-on Delay Time: 4.1ns
Turn-off Delay Time: 23.9ns
Rise Time: 11.6ns
Fall Time: 7.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.6V
Technology: TrenchMOS
Input Capacitance: 535pF
Package Style:  TDFN-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
12,000
USA:
12,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$561.00
USD
Quantity
Unit Price
3,000
$0.187
6,000
$0.185
12,000
$0.183
45,000+
$0.178
Product Variant Information section