Référence fabricant
IMLT65R020M2HXTMA1
CoolSiC Series 650 V 107 A 24 mOhm Single N-Channel SiC MOSFET - PG‑HDSOP‑16
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1800 par Reel Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2520 | ||||||||||
Infineon IMLT65R020M2HXTMA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change informationSubject One Virtual fab capacity extension and Introduction of an additional wafer production and wafer test location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for SICMOS 650V GEN2 products, 6inchDescription Old - Infineon Technologies Austria AG, Villach, Austria 6inchNew- One Virtual Fab 6inch (Villach / Kulim)Reason Additional capacity to ensure continuity of supply and enable flexible manufacturing.Intended start of delivery 2025-08-16 (depending on customer approval)
Statut du produit:
Infineon IMLT65R020M2HXTMA1 - Caractéristiques techniques
| Technology: | SiC (Silicon Carbide) Schottky |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain Current: | 107A |
| Power Dissipation: | 454W |
| Operating Temp Range: | -55°C to +175°C |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
1800 par Reel
Méthode de montage :
Surface Mount