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Manufacturer Part #

SCT20N120AG

SCT20N120 Series 1200 V 20 A 0.239 Ohm Through Hole N-Ch Power MOSFET - HIP-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT20N120AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 20A
Input Capacitance: 650pF
Power Dissipation: 153W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$4,152.00
USD
Quantity
Unit Price
30
$7.06
90
$7.01
150
$6.98
600
$6.92
900+
$6.88
Product Variant Information section