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  6. SCTW40N120G2V

STMicroelectronics | SCTW40N120G2V

Manufacturer Part #

SCTW40N120G2V

1200 V 62 mOhm 36 A Silicon Carbide Power MOSFET - HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCTW40N120G2V - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 36A
Input Capacitance: 1233pF
Power Dissipation: 278W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
600
Multiple Of:
600
Total
$5,706.00
USD
Quantity
Unit Price
600+
$9.51
Product Variant Information section