NXH011T120M3F2PTHG in Tray by onsemi | Silicon Carbide Power Modules (SiC Power Modules) | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide Power Modules (SiC Power Modules)
  6. NXH011T120M3F2PTHG

onsemi | NXH011T120M3F2PTHG

Manufacturer Part #

NXH011T120M3F2PTHG

4 N-Channel 1200 V 91 A 272 W 16 mOhm Silicon Carbide MOSFET Module - PIM-29

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2349
Product Specification Section
onsemi NXH011T120M3F2PTHG - Technical Attributes
Attributes Table
Type: Power Module
Technology: SiC (Silicon Carbide) Schottky
Gate-Source Voltage-Max [Vgss]: 1200V
Drain Current: 91A
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
13,900
Factory Lead Time:
10 Weeks
Minimum Order:
20
Multiple Of:
20
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,083.20
USD
Quantity
Unit Price
20+
$104.16
Product Variant Information section