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Vishay | VSLY5850

Manufacturer Part #

VSLY5850

850 nm 100 mA ±3° Through Hole High Speed Infrared Emitting Diode - T-1 3/4

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
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Product Specification Section
Vishay VSLY5850 - Technical Attributes
Attributes Table
Wavelength: 850nm
Angle of Half Intensity: ±3°
Intensity: 600mW/cm2
Forward (Drive) Current: 100mA
Forward Voltage: 1.65V
Package Style:  T-1 3/4
Mounting Method: Through Hole
Features & Applications

The VSLY5850 is a 850 nm High speed infrared emitting diode. It's based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens.

Features:

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
  • Leads with stand-off
  • Peak wavelength: λp = 850 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Narrow angle of half intensity: ? = ± 3°
  • Suitable for high pulse current operation
  • Good spectral matching with CMOS cameras
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition

Applications:

  • Infrared radiation source for operation with CMOS cameras
  • High speed IR data transmission
  • Smoke-automatic fire detectors
  • IR Flash
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4000
Multiple Of:
4000
Total
$1,980.00
USD
Quantity
Unit Price
4,000+
$0.495
Product Variant Information section