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Infineon — IMCQ120R010M2H CoolSiC™ MOSFET

Infineon

Infineon IMCQ120R010M2H CoolSiC™ MOSFET

Top-side cooled 1200 V SiC reaches new performance levels

The CoolSiC Generation 2 family of silicon carbide MOSFETs from Infineon delivers exceptional thermal performance, reliability, and energy efficiency. Housed in a top-side cooled Q-DPAK package with .XT technology, these 1200 V, 10 mΩ MOSFETs exceed previous generations in both durability and switching performance.

The Q-DPAK solution simplifies assembly, reduces system cost, and enables greater design flexibility, making it ideal for a wide range of industrial applications.

Features

  • 1200 V VDSS at Tvj = 25°C and IDDC = 138 A at TC = 100°C
  • RDS(on) = 10 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses for high efficiency
  • .XT interconnection technology for best-in-class thermal performance
  • Benchmark gate threshold voltage VGS(th) = 4.2 V
  • Robust against parasitic turn-on; 0 V turn-off gate voltage supported
  • Robust body diode for hard commutation
  • Lower stray inductance for improved performance
  • Short-circuit withstand time of 2 µs

Applications

  • Electric vehicle (EV) charging systems
  • Energy storage and battery management
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Solid-state circuit breakers
  • Industrial motor drives


Infineon IMCQ120R010M2H CoolSiC™ MOSFET

 

Silicon Power MOSFETs - Infineon’s Path to Global Market Leadership