text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPD35N10S3L26ATMA1

Infineon | IPD35N10S3L26ATMA1

Manufacturer Part #

IPD35N10S3L26ATMA1

Single N-Channel 100 V 24 mOhm 30 nC OptiMOS™ Power Mosfet - TO-252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2418
Product Specification Section
Infineon IPD35N10S3L26ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 71|W
Qg Gate Charge: 30nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,725.00
USD
Quantity
Unit Price
2,500
$0.69
5,000
$0.68
7,500
$0.675
10,000+
$0.67
Product Variant Information section