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Manufacturer Part #
IPD35N10S3L26ATMA1
Single N-Channel 100 V 24 mOhm 30 nC OptiMOS™ Power Mosfet - TO-252-3-11
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2418 | ||||||||||
Infineon IPD35N10S3L26ATMA1 - Product Specification
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ECCN:
PCN Information:
Subject: Several changes affecting products IPBxxS3-xx, IPPxxS3-xx, IPDxxS3-xx, IPBxxS3L-xx, IPPxxS3L-xx and IPDxxS3L-xxReason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in wafer fab Regensburg, we have extended our FE capacity for products IPBxxS3-xx, IPPxxS3-xx, IPDxxS3-xx and IPBxxS3L-xx, IPPxxS3L-xx, IPDxxS3L-xx Ensure delivery capability by establishing same SFET3 technology at well known Infineon FE fab Kulim.Expansion of wafer test to increase testing capacity.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPD35N10S3L26ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/ipd35n10s3l26atma1-infineon-7060196
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPD35N10S3L26ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/ipd35n10s3l26atma1-infineon-7060196
Infineon IPD35N10S3L26ATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 24mΩ |
| Rated Power Dissipation: | 71|W |
| Qg Gate Charge: | 30nC |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount