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Référence fabricant
IRF3710STRLPBF
Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2445 | ||||||||||
Infineon IRF3710STRLPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF3710STRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irf3710strlpbf-infineon-2173863
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF3710STRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irf3710strlpbf-infineon-2173863
Infineon IRF3710STRLPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 23mΩ |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 130nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 57A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 58ns |
| Fall Time: | 47ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 9.65mm |
| Input Capacitance: | 3130pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount