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Manufacturer Part #
NJG1170UX2-TE1
NJG1170UX2 Series 3.3 V 4.8 mA Low Noise Amplifier with Bypass for LTE -EPFFP -6
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| Mfr. Name: | Nisshinbo Micro Devices | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Std. Mfr. Pkg Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Nisshinbo Micro Devices NJG1170UX2-TE1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=NJG1170UX2-TE1&field4=Nisshinbo Micro Devices&field18=https://p1na.futureelectronics.com/de/p/semiconductors--wireless-rf--rf-amplifiers--low-noise/njg1170ux2-te1-nisshinbo-micro-devices-C725536899
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=NJG1170UX2-TE1&field4=Nisshinbo Micro Devices&field18=https://p1na.futureelectronics.com/de/p/semiconductors--wireless-rf--rf-amplifiers--low-noise/njg1170ux2-te1-nisshinbo-micro-devices-C725536899
Nisshinbo Micro Devices NJG1170UX2-TE1 - Technical Attributes
Attributes Table
| Supply Voltage: | 1.5V to 3.3V |
| Supply Current: | 4.8mA |
| Noise Figure: | 0.8dB |
| Frequency Range: | 2.69GHz |
| Power Dissipation: | 430mW |
| Operating Temp Range: | -40°C to +105°C |
| Storage Temperature Range: | -55°C to +150°C |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
5,000+
$0.54
Product Variant Information section
Available Packaging
Package Qty:
5000 per Std. Mfr. Pkg
Mounting Method:
Surface Mount