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STMicroelectronics | STP190N55LF3

Manufacturer Part #

STP190N55LF3

55 V 2.9 mOhm 120 A N-Channel STripFET™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP190N55LF3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 3.7mΩ
Rated Power Dissipation: 312W
Qg Gate Charge: 60nC
Gate-Source Voltage-Max [Vgss]: 18V
Drain Current: 120A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 160ns
Rise Time: 40ns
Fall Time: 40ns
Gate Source Threshold: 2.5V
Input Capacitance: 6200pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$2,370.00
USD
Quantity
Unit Price
1
$2.50
25
$2.44
100
$2.40
300
$2.37
1,250+
$2.30
Product Variant Information section