MJE3055T in Tube by STMicroelectronics | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

MJE3055T

MJE3055T Series NPN 60 V 10 A Complementary Silicon Power Transistor - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics MJE3055T - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 60V
Collector Current Max: 10A
Power Dissipation-Tot: 75W
Collector - Base Voltage: 70V
Collector - Emitter Saturation Voltage: 8V
Emitter - Base Voltage: 5V
DC Current Gain-Min: 5
Collector - Current Cutoff: 1mA
Configuration: Single
Frequency - Transition: 2MHz
Operating Temp Range: -55°C to +150°C
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features:

  • Complementary PNP-NPN Devices
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
4000
Multiple Of:
50
Total
$1,380.00
USD
Quantity
Unit Price
1
$0.385
75
$0.38
250
$0.37
750
$0.36
2,500+
$0.345
Product Variant Information section