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Manufacturer Part #

DMN10H220L-7

DMN10H220L Series 100 V 250 mOhm N-Channel Enhancement Mode Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2402
Product Specification Section
Diodes Incorporated DMN10H220L-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 220mΩ
Rated Power Dissipation: 1.3W
Qg Gate Charge: 8.3nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 1.4A
Turn-on Delay Time: 6.8ns
Turn-off Delay Time: 7.9ns
Rise Time: 8.2ns
Fall Time: 3.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 401pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
18,000
USA:
18,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$240.90
USD
Quantity
Unit Price
3,000
$0.0803
9,000
$0.0783
15,000
$0.0774
45,000
$0.0755
75,000+
$0.0739
Product Variant Information section