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Manufacturer Part #
IPB048N15N5ATMA1
Single N-Channel 150 V 4.8 mOhm 80 nC OptiMOS™ Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2519 | ||||||||||
Infineon IPB048N15N5ATMA1 - Product Specification
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Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Part Status:
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Infineon IPB048N15N5ATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 150V |
| Drain-Source On Resistance-Max: | 4.8mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 80nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 120A |
| Turn-on Delay Time: | 19.6ns |
| Turn-off Delay Time: | 4.5ns |
| Rise Time: | 5.3ns |
| Fall Time: | 37ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3.8V |
| Technology: | OptiMOS |
| Height - Max: | 4.57mm |
| Length: | 10.31mm |
| Input Capacitance: | 6000pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount