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Référence fabricant

IRFS4227TRLPBF

Single N-Channel 200V 26 mOhm 98 nC HEXFET® Power Mosfet - D2PAK

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IRFS4227TRLPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 330W
Qg Gate Charge: 98nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 62A
Turn-on Delay Time: 33ns
Turn-off Delay Time: 21ns
Rise Time: 20ns
Fall Time: 31ns
Operating Temp Range: -40°C to +175°C
Gate Source Threshold: 5V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 4600pF
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications
The IRFS4227TRLPBF is a N-Channel Hexfet Power Mosfet. Operating temperature ranges between -40 to 175°C and is available in D2PAK-3 SMT Package.

Features:

  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175°C Operating Junction Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
8 Semaines
Commande minimale :
800
Multiples de :
800
Total 
692,00 $
USD
Quantité
Prix unitaire
800
$0.865
1 600
$0.85
2 400
$0.845
4 000
$0.835
8 000+
$0.82
Product Variant Information section