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Manufacturer Part #

SIR880DP-T1-GE3

SiHG20N50C Series 80 V 60 A 5.9 mOhm Power MOSFET - POWERPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR880DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 5.9mΩ
Rated Power Dissipation: 6.25|W
Qg Gate Charge: 49nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 38ns
Rise Time: 10ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Height - Max: 1.12mm
Length: 5.89mm
Input Capacitance: 2440pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
9,000
Factory Lead Time:
29 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,780.00
USD
Quantity
Unit Price
3,000+
$1.26
Product Variant Information section