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Référence fabricant

STF13NM60N

Single N-Channel 600 V 0.36 Ohm 27 nC 90 W Silicon Flange Mount Mosfet TO-220FP

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STF13NM60N - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 90W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 11A
Turn-on Delay Time: 3ns
Turn-off Delay Time: 30ns
Rise Time: 8ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 16.4mm
Length: 10.4mm
Input Capacitance: 790pF
Style d'emballage :  TO-220FP (TO-220FPAB)
Méthode de montage : Through Hole
Fonctionnalités et applications

The STF13NM60N is a N-channel MDmesh™ II Power MOSFET.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
14 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
2 240,00 $
USD
Quantité
Prix unitaire
50
$2.30
200
$2.26
500
$2.24
1 250
$2.22
2 000+
$2.18
Product Variant Information section