text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STH275N8F7-2AG

STMicroelectronics | STH275N8F7-2AG

Manufacturer Part #

STH275N8F7-2AG

80 V 1.7 mOhm typ., 180 A N-Channel STripFET™ F7 Power Mosfet - H2PAK-2

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH275N8F7-2AG - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2.1mΩ
Rated Power Dissipation: 315|W
Qg Gate Charge: 193nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 56ns
Turn-off Delay Time: 98ns
Rise Time: 180ns
Fall Time: 42ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Height - Max: 4.7mm
Length: 10.4mm
Input Capacitance: 13600pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,900.00
USD
Quantity
Unit Price
1,000
$2.90
2,000+
$2.87
Product Variant Information section