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Référence fabricant

STP10NK60ZFP

N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220-FP

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP10NK60ZFP - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.75Ω
Rated Power Dissipation: 35W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 10A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 55ns
Rise Time: 20ns
Fall Time: 30ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 1370pF
Style d'emballage :  TO-220FP (TO-220FPAB)
Méthode de montage : Through Hole
Fonctionnalités et applications
The STP10NK60ZFP is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very good manufacturing reliability

Application:

  • Switching applications

View the Complete family of STP10N Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
1 630,00 $
USD
Quantité
Prix unitaire
50
$1.67
200
$1.65
750
$1.63
1 500
$1.61
3 750+
$1.59
Product Variant Information section