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Manufacturer Part #

IMCQ120R026M2HXTMA1

N-Channel 1200 V 82 A 405 W Surface Mount Power Transistor - Q-DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IMCQ120R026M2HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 82A
Input Capacitance: 2.54nF
Power Dissipation: 405W
Operating Temp Range: -55°C to +175°C
Package Style:  PG-HDSOP-22
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
750
Multiple Of:
750
Total
$5,250.00
USD
Quantity
Unit Price
750+
$7.00