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STMicroelectronics | STB6NK60Z-1

Manufacturer Part #

STB6NK60Z-1

N-Channel 600 V 1.2 Ohm SuperMESH™ Power MosFet - I2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB6NK60Z-1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 110W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 6A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 47ns
Rise Time: 14ns
Fall Time: 19ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 905pF
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
2000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,080.00
USD
Quantity
Unit Price
50
$0.575
250
$0.555
1,250
$0.54
2,500
$0.535
7,500+
$0.515
Product Variant Information section