Manufacturer Part #
FQPF13N50CF
N-Channel 500 V 0.54 Ohm Flange Mount Mosfet - TO-220F
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220F Mounting Method:Through Hole | ||||||||||
| Date Code: | 2542 | ||||||||||
Product Specification Section
onsemi FQPF13N50CF - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FQPF13N50CF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.48Ω |
| Rated Power Dissipation: | 44|W |
| Qg Gate Charge: | 43nC |
| Package Style: | TO-220F |
| Mounting Method: | Through Hole |
Features & Applications
The FQPF13N50CF is a N-Channel enhancement mode power field effect transistor.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features:
- 13 A, 500 V, RDS(on) = 0.54 Ω @VGS = 10 V
- Low gate charge (typical 43 nC)
- Low Crss (typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 100ns)
Applications:
- TBA ?
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
29 Weeks
Quantity
Unit Price
1,000
$1.61
2,000
$1.60
3,000
$1.59
4,000
$1.58
5,000+
$1.57
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220F
Mounting Method:
Through Hole