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Référence fabricant

IR2117SPBF

IR2117 Series 600 V 250 mA 20 V Supply Single High Or Low Side Driver - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2226
Product Specification Section
Infineon IR2117SPBF - Caractéristiques techniques
Attributes Table
Configuration: High Side
No of Outputs: Single
Peak Output Current: 500mA
Supply Voltage-Max: 20V
Rated Power Dissipation: 0.625W
Quiescent Current: 70µA
Turn-off Delay Time: 105ns
Turn-on Delay Time: 125ns
Rise Time: 80ns
Fall Time: 40ns
Operating Temp Range: -40°C to +125°C
Style d'emballage :  SOIC-8N
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IR2117SPBF is a high voltage, high speed power MOSFET and IGBT driver, available in surface mount SOIC-8 package.

This device features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Undervoltage lockout
  • CMOS Schmitt-triggered inputs with pull-down
  • Output in phase with input (IR2117)
  • Also available LEAD-FREE
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
3800
Multiples de :
95
Total 
3 059,00 $
USD
Quantité
Prix unitaire
1
$0.925
40
$0.90
150
$0.875
500
$0.855
2 000+
$0.805
Product Variant Information section