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Infineon | BSC014N04LSIATMA1

Manufacturer Part #

BSC014N04LSIATMA1

BSC014N04LSI Series 40 V 31 A 1.45 mOhm OptiMOSTM Power Mosfet - TDSON-8 FL

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC014N04LSIATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.45mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 55ns
Rise Time: 50ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 4000pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,125.00
USD
Quantity
Unit Price
5,000
$0.625
10,000+
$0.615
Product Variant Information section