onsemi | FDC6321C

The FDC6321C is a FDC series of 25 V 0.45 Ohm Dual N and P-Channel Digital FET and is available in a SSOT-6 package .

These dual N & P Channel logic level enhancement mode field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.

Product Features :

• N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V
• P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.
• Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.0 V.
• Gate-Source Zener for ESD ruggedness. 6kV Human Body Model
• Replace multiple dual NPN & PNP digital transistors. 

Applications :

• AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
• External AC-DC Merchant Power Supply - Wireless Communications
• Wireless LAN Card & Broadband Access
• Medical Electronics/Devices