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Référence fabricant

FDN5630

N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date: 2427
Product Specification Section
onsemi FDN5630 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 0.46W
Qg Gate Charge: 7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.7A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 15ns
Rise Time: 6ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Technology: PowerTrench
Input Capacitance: 400pF
Style d'emballage :  SSOT-3
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDN5630 is 60 V 100 mΩ N-Channel MOSFET it has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This MOSFET features very low RDS(ON) in a small SOT23 footprint. The PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

Features:

  • 1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 6 V.
  • Optimized for use in high frequency DC/DC converters.
  • Low gate charge.
  • Very fast switching.
  • SuperSOT™ - 3 provides low RDS(ON) in SOT23 footprint

Applications:

  • DC/DC converter
  • Motor drives
Pricing Section
Stock global :
156 000
États-Unis:
156 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
363,00 $
USD
Quantité
Prix unitaire
3 000
$0.121
9 000
$0.119
15 000
$0.118
30 000
$0.117
60 000+
$0.115