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  6. IPTC039N15NM5ATMA1

Infineon | IPTC039N15NM5ATMA1

Manufacturer Part #

IPTC039N15NM5ATMA1

MOSFET TRENCH =100V

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPTC039N15NM5ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 3.9mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 74nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 23.5ns
Rise Time: 4.5ns
Fall Time: 5.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.8V
Technology: TrenchMOS
Input Capacitance: 5600pF
Series: OptiMOS™ 5
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1800
Multiple Of:
1800
Total
$5,670.00
USD
Quantity
Unit Price
1,800+
$3.15
Product Variant Information section