En raison des conditions météorologiques extrêmes, le traitement et l'expédition des commandes seront retardés.
Référence fabricant
IPW60R070P6XKSA1
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Infineon IPW60R070P6XKSA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3Subject Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3.Reason Expansion of assembly and test location to assure continuity and increase of supply.Intended start of delivery 2023-02-25, or earlier, depending on customer?s approval
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPW60R070P6XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipw60r070p6xksa1-infineon-9183538
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPW60R070P6XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipw60r070p6xksa1-infineon-9183538
Infineon IPW60R070P6XKSA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 70mΩ |
| Rated Power Dissipation: | 391|W |
| Qg Gate Charge: | 100nC |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole