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Référence fabricant

IRFB4615PBF

Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2422
Product Specification Section
Infineon IRFB4615PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 144|W
Qg Gate Charge: 26nC
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The  IRFB4615PBF is a 150V HEXFET® power MOSFET with ultra low gate charge (Qg) for industrial applications including Switch Mode Power Supplies (SMPS), uninterruptable power supplies (UPS), inverters and DC motor drives.

IR’s 150V MOSFETs offer up to 59 percent lower total gate charge than competing devices.

IR’s new 150V MOSFETs are optimized for fast switching circuits where switching losses are critical, and, therefore, are well suited as a primary switch for isolated DC-DC converters for telecom applications or driving light load efficiency in any advanced DC-DC applications.

The IRFB4615PBF is Single N-Channel 150 V 144 W MOSFET.  These devices are qualified to industrial grade and are moisture sensitivity level 1 (MSL1). The devices are available in TO220, offered lead free and are RoHS compliant.

Pricing Section
Stock global :
14 300
États-Unis:
14 300
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
8 Semaines
Commande minimale :
50
Multiples de :
50
Total 
35,00 $
USD
Quantité
Prix unitaire
50
$0.70
250
$0.675
1 000
$0.66
2 500
$0.65
6 250+
$0.625
Product Variant Information section