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Référence fabricant
IRFB5615PBF
Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Flange Mount | ||||||||||
| Code de date: | 2335 | ||||||||||
Infineon IRFB5615PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFB5615PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfb5615pbf-infineon-4141016
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFB5615PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfb5615pbf-infineon-4141016
Infineon IRFB5615PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 150V |
| Drain-Source On Resistance-Max: | 39mΩ |
| Rated Power Dissipation: | 144|W |
| Qg Gate Charge: | 26nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Flange Mount |
Fonctionnalités et applications
The IRFB5615PBF is a 150 V 144 W 26 nC N-Channel Digital Audio MOSFET specifically designed for Class-D audio amplifier applications. Operating temperature ranges from -55°C to 175 °C and available in TO-220AB Flange Mount Package.
MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.
Features:
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low RDSON for Improved Efficiency
- Low QG and QSW for Better THD and Improved Efficiency
- Low QRR for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Can Deliver up to 300W per Channel into4ΩLoad in Half-Bridge Configuration Amplifier
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Flange Mount