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Référence fabricant

IRFR24N15DTRPBF

Single N-Channel 150 V 95 mOhm 45 nC HEXFET® Power Mosfet - TO-252-3

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IRFR24N15DTRPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 95mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 24A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 19ns
Rise Time: 53ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 890pF
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IRFR24N15DTRPBF is a 150 V 140 W 30 nC single N-Channel Hexfet Power Mosfet available in TO-252AA Surface mount Package.It has an Operating temperature ranging from -55 to 175°C. 

Benefits:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design,
  • Fully Characterized Avalanche Voltage and Current
  • Lead-Free

Applications:

  • High frequency DC-DC Converters
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
26 Semaines
Commande minimale :
2000
Multiples de :
2000
Total 
820,00 $
USD
Quantité
Prix unitaire
2 000
$0.41
4 000
$0.405
6 000
$0.40
10 000+
$0.395
Product Variant Information section