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Référence fabricant

IRFS7437TRLPBF

Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2430
Product Specification Section
Infineon IRFS7437TRLPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.8mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 250A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 78ns
Rise Time: 70ns
Fall Time: 53ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 7330pF
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IRFS7437TRLPBF is a HEXFET power MOSFET with a maximum ON state resistance of 1.4 mΩ, available in surface mount D2-Pak-3 package.

Benefits:

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free
  • Halogen Free

Applications:

  • Brushed Motor drive applications
  • BLDC Motor drive applications
  • PWM Inverterized topologies
  • Battery powered circuits
  • Half-bridge and full-bridge topologies
  • Electronic ballast applications
  • Synchronous rectifier applications
  • Resonant mode power supplies
  • OR-ing and redundant power switches
  • DC/DC and AC/DC converters
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
8 Semaines
Commande minimale :
800
Multiples de :
800
Total 
468,00 $
USD
Quantité
Prix unitaire
800
$0.585
2 400
$0.57
8 000
$0.56
12 000+
$0.55
Product Variant Information section