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Référence fabricant

IRLB8748PBF

Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IRLB8748PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 75|W
Qg Gate Charge: 15nC
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The IRLB87 MOSFET series recently release by International Rectifier are industrial-qualified 30V TO-220 HEXFET® power MOSFETs with extremely low gate charge (Qg) for applications including Uninterruptable Power Supply (UPS) inverters, low voltage power tools, ORing applications and netcom and server power supplies.

These robust MOSFETs feature IR’s latest generation Trench technology and offer very low on-state resistance (RDS(on)) to reduce thermal dissipation. In addition, the new devices’ ultra low gate

The devices are qualified to industrial grade and moisture sensitivity level 1 (MSL1). The 30V MOSFETs are available in a TO-220 package, are offered lead free and are RoHS compliant.

The IRLB8748PBF is a 30v 78a 4.7mohm hexfet that comes in a TO-220 package, and are lead-free.

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
2000
Multiples de :
50
Total 
790,00 $
USD
Quantité
Prix unitaire
50
$0.415
250
$0.405
1 250
$0.395
3 750
$0.385
10 000+
$0.375
Product Variant Information section