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Référence fabricant

NDT2955

Single P-Channel 60 V 3 W 15 nC Silicon Surface Mount Mosfet - SOT-223

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date: 2421
Product Specification Section
onsemi NDT2955 - Caractéristiques techniques
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 513mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.5A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 19ns
Rise Time: 20ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.8mm
Length: 6.7mm
Input Capacitance: 601pF
Méthode de montage : Surface Mount
Fonctionnalités et applications

The NDT2955 Part Number is a -60 V P-Channel MOSFET is produced using Semiconductor’s high voltage Trench process. Its operating temperature ranges from -55 °C to 150 °C . It has been optimized for power management applications.

Features:

  • -2.5 A, -60 V
  • RDS(ON) = 300 mO @ VGS = -10 V
  • RDS(ON) = 500 mO @ VGS = -4.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widelyused surface mount package.

Applications:

  • DC/DC converter
  • Power management
  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Stock global :
1 324 000
États-Unis:
1 324 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
24 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 040,00 $
USD
Quantité
Prix unitaire
4 000
$0.26
12 000
$0.255
20 000+
$0.25