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STMicroelectronics | STD9NM60N

Manufacturer Part #

STD9NM60N

N-Channel 600 V 745 mOhm Surface Mount MDmesh II Power MosFet - TO-252-3

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Mfr. Name: STMicroelectronics
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Product Variant Information section
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Product Specification Section
STMicroelectronics STD9NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 745mΩ
Rated Power Dissipation: 70|W
Qg Gate Charge: 17.4nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD9NM60N is a N-channel MDmesh™ II Power MOSFET. This series of devices is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,237.50
USD
Quantity
Unit Price
2,500
$0.495
5,000
$0.485
7,500+
$0.48
Product Variant Information section