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Manufacturer Part #

SCT018H65G3AG

Power Transistors - WIDE BANDGAP TRANSISTORS 10-ADG SIC MOSFET

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT018H65G3AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 55A
Input Capacitance: 2124pF
Power Dissipation: 385W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$11,550.00
USD
Quantity
Unit Price
1,000+
$11.55
Product Variant Information section