text.skipToContent text.skipToNavigation

Référence fabricant

MJE3055T

MJE3055T Series NPN 60 V 10 A Complementary Silicon Power Transistor - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics MJE3055T - Caractéristiques techniques
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 60V
Collector Current Max: 10A
Power Dissipation-Tot: 75W
Collector - Base Voltage: 70V
Collector - Emitter Saturation Voltage: 8V
Emitter - Base Voltage: 5V
DC Current Gain-Min: 5
Collector - Current Cutoff: 1mA
Configuration: Single
Frequency - Transition: 2MHz
Operating Temp Range: -55°C to +150°C
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Through Hole
Fonctionnalités et applications

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features:

  • Complementary PNP-NPN Devices
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
14 Semaines
Commande minimale :
4000
Multiples de :
50
Total 
1 380,00 $
USD
Quantité
Prix unitaire
1
$0.385
75
$0.38
250
$0.37
750
$0.36
2 500+
$0.345
Product Variant Information section