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Infineon | IGC037S12S1XTMA1

Manufacturer Part #

IGC037S12S1XTMA1

GaN MOSFET 120V,71A,2.7MOHM,N-CH,6-PowerTDFN

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2512
Product Specification Section
Infineon IGC037S12S1XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 71A
No of Channels: 1
Qg Gate Charge: 10nC
Drain-to-Source Voltage [Vdss]: 120V
Gate-Source Voltage-Max [Vgss]: 5V
Input Capacitance: 1000pF
Rated Power Dissipation: 3.3W
Operating Temp Range: -40°C to +150°C
Package Style:  TSON-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$7,900.00
USD
Quantity
Unit Price
5,000+
$1.58
Product Variant Information section
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