Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Référence fabricant
BSS131H6327XTSA1
Single N-Channel 240 V 14 Ohm 2.1 nC SIPMOS® Small Signal Mosfet - SOT-23
|
|
|||||||||||
|
|
|||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-23 (SC-59,TO-236) Méthode de montage :Surface Mount |
||||||||||
| Code de date: | 2528 | ||||||||||
Infineon BSS131H6327XTSA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change informationSubject: Introduction of additional plating production at Wuxi Welnew Microelectronic Co., Ltd., Wuxi, China for several productsReason/Motivation:Expansion of plating production to assure continuity of supply and enable flexible manufacturing by recovery of Welnew Wuxi Plating site for DS products (PCN 2023-034-A) DescriptionOldShanghai Welnew Microelectronic Co., Ltd., Shanghai, ChinaNewShanghai Welnew Microelectronic Co., Ltd., Shanghai, ChinaWuxi Welnew Microelectronic Co., Ltd., Wuxi, ChinaIntended start of delivery: 2026-06-20Last order date (LOD): 2026-06-20Last delivery date (LDD): 2026-12-20
Detailed change information Subject Change of plating production site from Wuxi Welnew Micro. Co., Ltd., Wuxi, China to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia and Shanghai Welnew Micro. Co., Ltd., Shanghai, China due to Wuxi Welnew site burning down Reason To assure continuity of supply, plating production site will be transferred to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia and Shanghai Welnew Microelectronic Co., Ltd., Shanghai, China
Statut du produit:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=BSS131H6327XTSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/bss131h6327xtsa1-infineon-2173850
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=BSS131H6327XTSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/bss131h6327xtsa1-infineon-2173850
Infineon BSS131H6327XTSA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 240V |
| Drain-Source On Resistance-Max: | 14Ω |
| Rated Power Dissipation: | 360|mW |
| Qg Gate Charge: | 2.1nC |
| Style d'emballage : | SOT-23 (SC-59,TO-236) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount