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onsemi | FDN360P

Manufacturer Part #

FDN360P

Single P-Channel 30 V 80 mOhm PowerTrench Mosfet - SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
onsemi FDN360P - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications
The FDN360P is a 30 V 80 mΩ single P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • -2 A, -30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • Low gate charge (6.2nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power version of industry Standard SOT-23package

Applications:

  • Low voltage and battery powered application
  • Low in-line power loss and fast switching
Pricing Section
Global Stock:
105,000
USA:
105,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$396.00
USD
Quantity
Unit Price
3,000
$0.132
9,000
$0.13
12,000
$0.129
30,000
$0.127
45,000+
$0.126
Product Variant Information section