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Référence fabricant
FQB27P06TM
P-Channel 60 V 70 mOhm Surface Mount Q-FET Mosfet - D2PAK
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
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onsemi FQB27P06TM - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FQB27P06TM&field4=onsemi&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/fqb27p06tm-onsemi-3043007
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FQB27P06TM&field4=onsemi&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/fqb27p06tm-onsemi-3043007
onsemi FQB27P06TM - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 70mΩ |
| Rated Power Dissipation: | 3.75W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 27A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 185ns |
| Fall Time: | 90ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 1100pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FQB27P06TM is a 60 V 70 mOhm Surface Mount P-Channel MOSFET - D2PAK-3.These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features:
- -27 A, -60 V, RDS(on)= 0.07 W@VGS= -10 V
- Low gate charge ( typical 33 nC)
- Low Crss (typical 120 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
- 175 ºC maximum junction temperature rating
- RoHS Compliant
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount
