Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
IRF5305PBF
Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Flange Mount | ||||||||||
| Code de date: | 2325 | ||||||||||
Infineon IRF5305PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
- Updated information marked in BLUE TYPE- Original PCN N? 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: ? United States = Infineon Technologies Temecula? Taiwan = EPISIL Technologies Inc.? Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF5305PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/irf5305pbf-infineon-9899535
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF5305PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/irf5305pbf-infineon-9899535
Infineon IRF5305PBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.06Ω |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 63nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 39ns |
| Rise Time: | 66ns |
| Fall Time: | 63ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 8.77mm |
| Length: | 10.54mm |
| Input Capacitance: | 1200pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Flange Mount |
Fonctionnalités et applications
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
The IRF5305PBF is a Single P-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Flange Mount