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Référence fabricant
IRFR1N60ATRPBF
Single N-Channel 600 V 7 Ohms Surface Mount Power Mosfet - TO-252
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
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Vishay IRFR1N60ATRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
This advisory is being provided to you as an announcement that we will introduce an improved packing reel design change for Vishay Siliconix TO252 HVM & SOT223 packages at ATX, Weihai, China.The change is to standardize with Vishay Siliconix LVM products which will be implemented starting from January 2023 onwards and original reel availability will depend on distribution inventory status then.Please refer to 2nd page of this advisory letter for affected parts list.There will be no effect on the quality, reliability, or performance.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR1N60ATRPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irfr1n60atrpbf-vishay-9559402
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR1N60ATRPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irfr1n60atrpbf-vishay-9559402
Vishay IRFR1N60ATRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 7Ω |
| Rated Power Dissipation: | 36|W |
| Qg Gate Charge: | 14nC |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount