Référence fabricant
IRFR4104TRPBF
Single N-Channel 40V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252AA Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRFR4104TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Statut du produit:
Infineon IRFR4104TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 5.5mΩ |
| Rated Power Dissipation: | 140W |
| Qg Gate Charge: | 59nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 119A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 37ns |
| Rise Time: | 69ns |
| Fall Time: | 36ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 2950pF |
| Style d'emballage : | TO-252AA |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount