Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Référence fabricant
SI5948DU-T1-GE3
Dual N-Channel 40 V 82 mOhm 7 W TrenchFET Mosfet - PowerPAK ChipFET Dual
|
|
|||||||||||
|
|
|||||||||||
| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :3000 par Reel Méthode de montage :Surface Mount |
||||||||||
| Code de date: | 2537 | ||||||||||
Vishay SI5948DU-T1-GE3 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI5948DU-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/si5948du-t1-ge3-vishay-9090503
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI5948DU-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/si5948du-t1-ge3-vishay-9090503
Vishay SI5948DU-T1-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 82mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 3.3nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.7A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 7ns |
| Rise Time: | 25ns |
| Fall Time: | 10ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.5V |
| Input Capacitance: | 165pF |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Méthode de montage :
Surface Mount