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Référence fabricant
SQD19P06-60L_T4GE3
P-CHANNEL 60-V (D-S) 175C MOSFET
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SQD19P06-60L_T4GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: In order to increase front end capacity, Vishay is transferring some production of select part numbers to Vishay Newport Limited located in Newport, Wales UK. A list of affected parts and their Newport counterparts can be found on page 3 of this PCN.Reason for Change: Capacity Expansion
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Qualification of the Vishay Simconix assembly and test facility in Shanghai, China, for automotive wafer back-metal processing. This facility is currently our main location for processing commercial wafer back-metal. This extension to automotive wafers provides additional capacity to service immediate needs and also provides a backup facility as part of our business continuity planning. The package types included are TO-252 and TO-263. This PCN is for part numbers SQM40P10-40L, SQD19P06-60L and SQD40P10-40L. Dueto capacity constraints, your immediate approval of this change is requested in order to continue supply of these parts.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQD19P06-60L_T4GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/sqd19p06-60l-t4ge3-vishay-5128759
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQD19P06-60L_T4GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/sqd19p06-60l-t4ge3-vishay-5128759
Vishay SQD19P06-60L_T4GE3 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 55mΩ |
| Rated Power Dissipation: | 46W |
| Qg Gate Charge: | 41nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 25ns |
| Rise Time: | 9ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | -2.5V |
| Input Capacitance: | 1490pF |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Méthode de montage :
Surface Mount