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Référence fabricant
STP10NK80Z
N-Channel 800 V 0.9 Ohm Flange Mount SuperMESH Power MosFet - TO-220
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
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STMicroelectronics STP10NK80Z - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STP10NK80Z&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/stp10nk80z-stmicroelectronics-1331065
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STP10NK80Z&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/stp10nk80z-stmicroelectronics-1331065
STMicroelectronics STP10NK80Z - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 0.9Ω |
| Rated Power Dissipation: | 160W |
| Qg Gate Charge: | 72nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 9A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 65ns |
| Rise Time: | 20ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.75V |
| Input Capacitance: | 2180pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The STP10NK80Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Features:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeability
Applications:
View the Complete family of STP10N Mosfet Transistors
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole
