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Manufacturer Part #
IPD50P04P4L11ATMA2
IPD50P04P4L11 Series 40 V 50 A 10.6 mOhm 58 W 45 nC P-Channel MOSFET - TO-252
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2523 | ||||||||||
Infineon IPD50P04P4L11ATMA2 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Reprocessed previous Future PCN 91250 to include replacements parts.Detailed change information: Subject: Several changes affecting products IPBxP04P4x, IPDxP04P4x and IPP120P04P4L-03 Reason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in Villach on 200mm wafer diameter, we have to extend production
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPD50P04P4L11ATMA2&field4=Infineon&field18=https://p1na.futureelectronics.com/p/2140049
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPD50P04P4L11ATMA2&field4=Infineon&field18=https://p1na.futureelectronics.com/p/2140049
Infineon IPD50P04P4L11ATMA2 - Technical Attributes
| Product Status: | Active |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 10.6mΩ |
| Rated Power Dissipation: | 58W |
| Qg Gate Charge: | 45nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 50A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 46ns |
| Rise Time: | 9ns |
| Fall Time: | 39ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.7V |
| Technology: | OptiMOS |
| Input Capacitance: | 3000pF |
| Series: | OptiMOS-P2 |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount